METHOD FOR PLASMA ETCHING AND PLASMA ETCHING APPARATUS THEREOF
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Mar 13, 2014
app pub date -
Sep 12, 2012
filing date -
Sep 12, 2012
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A method for plasma etching is provided, wherein a substrate pre-defining a plurality of to-be-etched segments is secured on a movable stage, and a spray area of plasma from a plasma gun is limited to get a spray-area-limited plasma. Then, at least one of the to-be-etched segments is positioned in an etch position in turn by a step and repeat manner, to make the to-be-etched segments in the etch position to be etched by the spray-area-limited plasma. A plasma etching apparatus is also provided, so that the uniformity of the plasma etching process may be controlled precisely to raise the etching uniformity.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully