NITRIDE SEMICONDUCTOR DEVICE

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United States of America Patent

SERIAL NO

14087081

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Abstract

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A nitride semiconductor device used chiefly as an LD and an LED element. In order to improve the output and to decrease Vf, the device is given either a three-layer structure in which a nitride semiconductor layer doped with n-type impurities serving as an n-type contact layer where an n-electrode is formed is sandwiched between undoped nitride semiconductor layers; or a superlattice structure of nitride. The n-type contact layer has a carrier concentration exceeding 3×1010 cm3, and the resistivity can be lowered below 8×10−3 Ωcm.

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Patent Owner(s)

Patent OwnerAddress
NICHIA CORPORATIONANAN-SHI TOKUSHIMA 774-8601

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Marui, Hiromitsu Anan-shi, JP 4 237
Mitani, Tomotsugu Anan-shi, JP 8 408
Mukai, Takashi Anan-shi, JP 84 1226
NAKAMURA, Shuji Anan-shi, JP 443 15682
Tanizawa, Koji Anan-shi, JP 15 521

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