Semiconductor device
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United States of America Patent
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Dec 15, 2015
Grant Date -
Mar 27, 2014
app pub date -
Sep 10, 2013
filing date -
Sep 24, 2012
priority date (Note) -
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status (Latency Note)
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Abstract
A collector layer of a first conductivity type is provided in the IGBT region and the boundary region and functions as a collector of the IGBT in the IGBT region. A cathode layer of a second conductivity type is provided in the diode region apart from the collector layer and functions as a cathode of the diode. A drift layer of the second conductivity type is provided in the IGBT region, the boundary region, and the diode region, the drift layer being provided on sides of the collector layer and the cathode layer opposite the first electrode. A diffusion layer of the first conductivity type is provided in the boundary region on a side of the drift layer opposite the first electrode.
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