Semiconductor device and method of manufacturing the same

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9284186
APP PUB NO 20140084392A1
SERIAL NO

13625249

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Abstract

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After a TEOS oxide film is formed on the surface of a semiconductor device, a PSG film and an SiN film, which have air permeability, are formed on the surface of the TEOS oxide film. Thereafter, a Poly-Si film is formed thereon. A sacrifice layer is removed by a gaseous HF that passes through the PSG film, the SiN film, and the Poly-Si film, and then, the uppermost layer is covered with a Poly-Si/SiC film. A chip scale package having a thin-film hollow-seal structure can be realized on the semiconductor element.

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Patent Owner(s)

  • KABUSHIKI KAISHA TOSHIBA;THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Funaki, Hideyuki Tokyo, JP 147 1894
Itaya, Kazuhiko Kanagawa, JP 83 1989
Limkrailassiri, Kevin Newhall, US 1 0
Lin, Liwei San Ramon, US 37 1939
Mahajerin, Armon Berkeley, US 1 0
Suzuki, Kazuhiro Tokyo, JP 431 5447
Yamada, Hiroshi Kanagawa, JP 691 7940

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