SPIN TRANSFER TORQUE MEMORY (STTM) DEVICE WITH TOPOGRAPHICALLY SMOOTH ELECTRODE AND METHOD TO FORM SAME
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Mar 27, 2014
app pub date -
Sep 27, 2012
filing date -
Sep 27, 2012
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
Spin transfer torque memory (STTM) devices with topographically smooth electrodes and methods of fabricating STTM devices with topographically smooth electrodes are described. For example, a material layer stack for a magnetic tunneling junction includes a topographically smooth bottom electrode, a topographically smooth dielectric layer disposed above the bottom electrode, and a free magnetic layer disposed above the topographically smooth dielectric layer.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully