Semiconductor device including integrated passive device formed over semiconductor die with conductive bridge and fan-out redistribution layer
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United States of America Patent
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Jun 14, 2016
Grant Date -
Mar 27, 2014
app pub date -
Nov 27, 2013
filing date -
Dec 22, 2010
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Abstract
A semiconductor device has a first semiconductor die. A first inductor is formed over the first semiconductor die. A second inductor is formed over the first inductor and aligned with the first inductor. An insulating layer is formed over the first semiconductor die and the first and second inductors. A conductive bridge is formed over the insulating layer and electrically connected between the second inductor and the first semiconductor die. In one embodiment, the semiconductor device has a second semiconductor die and a conductive layer is formed between the first and second semiconductor die. In another embodiment, a capacitor is formed over the first semiconductor die. In another embodiment, the insulating layer has a first thickness over a footprint of the first semiconductor die and a second thickness less than the first thickness outside the footprint of the first semiconductor die.
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