Method for forming pattern and method for producing original lithography mask
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United States of America Patent
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Feb 10, 2015
Grant Date -
Mar 27, 2014
app pub date -
Mar 4, 2013
filing date -
Sep 27, 2012
priority date (Note) -
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Abstract
A method forming a pattern includes a process in which self-assembly material is formed on the substrate where on which a fiducial mark is formed, and the self-assembly material is separated in micro phase to form a self-assembled pattern. The position error from a predetermined formation position of the self-assembled pattern is measured on the basis of the fiducial mark, and a pattern for an alignment as well as a peripheral circuit pattern are formed on the substrate. The formation position of at least one pattern among the pattern for alignment and peripheral circuit pattern is corrected using the position error.
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