Method of manufacturing a semiconductor device having a magnetic film using plasma etching

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United States of America Patent

PATENT NO 8987007
APP PUB NO 20140087485A1
SERIAL NO

14026397

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Abstract

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According to one embodiment, a method for manufacturing a semiconductor device is disclosed. The method includes forming a first magnetic film containing boron, forming a second magnetic film free from boron, above the first magnetic film. The method further includes selectively etching the second magnetic film with respect to the first magnetic film using plasma of etching gas which contains oxygen and hydrogen and which is free from halogen.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Tomioka, Kazuhiro Yokohama, JP 56 676

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