Manufacturing method for semiconductor device, annealing device, and annealing method

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United States of America Patent

PATENT NO 9449848
APP PUB NO 20140087547A1
SERIAL NO

14013885

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Abstract

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According to one embodiment, the manufacturing method for the semiconductor device according to the embodiment includes carrying out ion implantation to the semiconductor layer and forming an amorphous layer on the surface of the semiconductor layer, and a heat treatment process using microwave annealing at a temperature higher than or equal to 200° C. and lower than or equal to 700° C. and single crystallizes the amorphous layer.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Aoyama, Tomonori Mie, JP 78 1364
Isogai, Tatsunori Mie, JP 31 98
Kai, Wakana Kanagawa, JP 4 38
Miyano, Kiyotaka Tokyo, JP 73 1048

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