Low energy memristors with engineered switching channel materials

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United States of America Patent

PATENT NO 8779409
APP PUB NO 20140091270A1
SERIAL NO

13629946

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Abstract

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Low energy memristors with engineered switching channel materials include: a first electrode; a second electrode; and a switching layer positioned between the first electrode and the second electrode, wherein the switching layer includes a first phase comprising an insulating matrix in which is dispersed a second phase comprising an electrically conducting compound material for forming a switching channel.

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Patent Owner(s)

  • HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Riberio, Gilberto Medeiros Palo Alto, US 1 1
Williams, R Stanley Portola Valley, US 277 5890
Yang, Jianhua Palo Alto, US 174 2054
Zhang, Minxian Max Mountain View, US 25 149

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