SiC single crystal, production method therefor, SiC wafer and semiconductor device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9096947
APP PUB NO 20140091325A1
SERIAL NO

14119710

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Abstract

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When an SiC single crystal having a large diameter of a {0001} plane is produced by repeating a-plane growth, the a-plane growth of the SiC single crystal is carried out so that a ratio Sfacet (=S1×100/S2) of an area (S1) of a Si-plane side facet region to a total area (S2) of the growth plane is maintained at 20% or less.

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Patent Owner(s)

  • DENSO CORPORATION;SHOWA DENKO K.K.;KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Adachi, Ayumu Toyota, JP 14 112
Gunjishima, Itaru Nagakute, JP 10 80
Kobayashi, Masakazu Chichibu, JP 200 2481
Shigetoh, Keisuke Nagoya, JP 4 12
Urakami, Yasushi Obu, JP 44 247
Yamada, Masanori Nagoya, JP 136 1460

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