Field-effect-transistor with self-aligned diffusion contact

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United States of America Patent

PATENT NO 8928091
SERIAL NO

14096156

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Abstract

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Embodiments of the present invention provide an array of fin-type transistors formed on top of an oxide layer. At least a first and a second of the fin-type transistors have their respective source and drain contacts being formed inside the oxide layer, with one of the contacts of the first fin-type transistor being conductively connected to one of the contacts of the second fin-type transistor by an epitaxial silicon layer, wherein the epitaxial silicon layer is formed on top of a first and a second fin of the first and second fin-type transistors respectively.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Koburger,, III Charles W Delmar, US 105 1620
LaTulipe,, Jr Douglas C Guilderland, US 3 13

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