SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THEREOF
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United States of America Patent
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Issued Date -
Apr 3, 2014
app pub date -
Sep 30, 2013
filing date -
Oct 2, 2012
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Abandoned
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Abstract
It is therefore an object of the present invention to provide a method in which, in a semiconductor integrated circuit device, a plurality of transistors having wide-rangingly different Ioff levels are embedded together in a semiconductor device including transistors each using a non-doped channel. By controlling an effective channel length, a leakage current is controlled without changing an impurity concentration distribution in a transistor including a non-doped channel layer and a screen layer provided immediately under the non-doped channel layer.
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