Method of epitaxially forming contact structures for semiconductor transistors
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United States of America Patent
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May 19, 2015
Grant Date -
Apr 3, 2014
app pub date -
Dec 4, 2013
filing date -
Dec 20, 2011
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Abstract
Embodiments of the present invention provide a method of forming contact structure for transistor. The method includes providing a semiconductor substrate having a first and a second gate structure of a first and a second transistor formed on top thereof, the first and second gate structures being embedded in a first inter-layer-dielectric (ILD) layer; epitaxially forming a first semiconductor region between the first and second gate structures inside the first ILD layer; epitaxially forming a second semiconductor region on top of the first semiconductor region, the second semiconductor region being inside a second ILD layer on top of the first ILD layer and having a width wider than a width of the first semiconductor region; and forming a silicide in a top portion of the second semiconductor region.
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