Back-end-of-line metal-oxide-semiconductor varactors

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 8809155
APP PUB NO 20140097434A1
SERIAL NO

13644918

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Abstract

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Device structures, design structures, and fabrication methods for a varactor. The device structure includes a first electrode formed on a dielectric layer, and a semiconductor body formed on the first electrode. The semiconductor body is comprised of a silicon-containing semiconductor material in an amorphous state or a polycrystalline state. The device structure further includes an electrode insulator formed on the semiconductor body and a second electrode formed on the electrode insulator.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ellis-Monaghan, John J Grand Isle, US 254 2534
Hauser, Michael J Bolton, US 14 55
He, Zhong-Xiang Essex Junction, US 175 1738
Liu, Xuefeng South Burlington, US 142 1423
Phelps, Richard A Colchester, US 59 625
Rassel, Robert M Colchester, US 110 1046
Stamper, Anthony K Williston, US 613 6580

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