Semiconductor structures

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United States of America Patent

PATENT NO 8901700
SERIAL NO

14105595

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Abstract

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Methods of pitch doubling of asymmetric features and semiconductor structures including the same are disclosed. In one embodiment, a single photolithography mask may be used to pitch double three features, for example, of a DRAM array. In one embodiment, two wordlines and a grounded gate over field may be pitch doubled. Semiconductor structures including such features are also disclosed.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Parekh, Kunal R Boise, US 290 2983
Zahurak, John K Eagle, US 155 2371

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