Plasma Etch Resistant Films, Articles Bearing Plasma Etch Resistant Films and Related Methods
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United States of America Patent
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Issued Date -
Apr 10, 2014
app pub date -
Oct 9, 2012
filing date -
Oct 9, 2012
priority date (Note) -
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Abstract
The invention includes a plasma etch-resistant film for a substrate comprising a yttria material wherein at least a portion of the yttria material is in a crystal phase having a crystal lattice structure, wherein at least 50% of the yttria material is in a form of a monoclinic crystal system. The film may be treated by exposure to a fluorine gas plasma. Also included are plasma etch-resistant articles that include a substrate and a film, wherein the film comprises an yttria material and at least a portion of the yttria material is present in the film in a crystal phase having a crystal lattice structure and at least 50% of the yttria material is in a form of a monoclinic crystal system. Several methods are contemplated within the scope of the invention.
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