NONVOLATILE RESISTIVE MEMORY ELEMENT WITH A PASSIVATED SWITCHING LAYER
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
N/A
app pub date -
Dec 18, 2013
filing date -
Dec 2, 2011
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A nonvolatile resistive memory element has a novel variable resistance layer that is passivated with non-metallic dopant atoms, such as nitrogen, either during or after deposition of the switching layer. The presence of the non-metallic dopant atoms in the variable resistance layer enables the switching layer to operate with reduced switching current while maintaining improved data retention properties.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully