Semiconductor device and method of forming non-linear interconnect layer with extended length for joint reliability
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United States of America Patent
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Aug 25, 2015
Grant Date -
Apr 17, 2014
app pub date -
Dec 23, 2013
filing date -
Mar 9, 2012
priority date (Note) -
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Abstract
A semiconductor device has a substrate and first conductive layer formed over the substrate. An insulating layer is formed over the first substrate with an opening over the first conductive layer. A second conductive layer is formed within the opening of the insulating layer. A portion of the second conductive layer is removed to expose a horizontal surface and side surfaces of the second conductive layer below a surface of the insulating layer. The second conductive layer has non-linear surfaces to extend a contact area of the second conductive layer. The horizontal surface and side surfaces can be stepped surfaces or formed as a ring. A third conductive layer is formed over the second conductive layer. A plurality of bumps is formed over the horizontal surface and side surfaces of the second conductive layer. A semiconductor die is mounted to the substrate.
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