HIGH-SPEED GATE DRIVER FOR POWER SWITCHES WITH REDUCED VOLTAGE RINGING

Number of patents in Portfolio can not be more than 2000

United States of America Patent

APP PUB NO 20140103962A1
SERIAL NO

13649372

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A fast power switch comprises one or more field-effect transistors, such as pull-up and pull-down transistors, that are coupled to a load. Respective driver electronic circuits for each of the field-effect transistors include parallel first and second drivers with a shared driver output coupled to a gate of the field-effect transistor. The first and second drivers are operative to switch the shared driver output for the appropriate field-effect transistor in response to a transition (e.g., low-to-high or high-to-low) at a driver input terminal. A control circuit enables the stronger second driver in response to a transition at the driver input terminal and subsequently disables the second driver once a transition threshold at the gate of the field-effect transistor(s) is crossed. The weaker first driver is sized to damp reactive energy at the load to minimize ringing.

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Patent Owner(s)

Patent OwnerAddress
SL3J SYSTEMS S A R LPOLE D'ACTIVITE Y MORANDAT 1480 AVE D'ARMENIE GARDANNE 13120

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
AJRAM, Sami Gardanne, FR 10 130

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