Method of manufacturing semiconductor lasers

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United States of America Patent

PATENT NO 8936951
APP PUB NO 20140105235A1
SERIAL NO

13776428

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Abstract

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Provided are a semiconductor laser and a method of manufacturing the same. The method includes: providing a substrate including a buried oxide layer; forming patterns, which includes an opening part to expose the substrate, by etching the buried oxide layer; forming a germanium single crystal layer in the opening part; and forming an optical coupler, which is adjacent to the germanium single crystal layer, on the substrate.

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Patent Owner(s)

  • ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Jang, Ki Seok Daejeon, KR 36 259
Joo, JiHo Goyang-si, KR 43 219
Kim, Gyungock Daejeon, KR 85 573
Kim, In Gyoo Daejeon, KR 28 172
Kim, Sang Hoon Daejeon, KR 219 1064

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