LIGHT INDUCED NICKEL PLATING METHOD FOR P-TYPE SILICON AND N/P SOLAR CELL MATERIAL
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United States of America Patent
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Issued Date -
Apr 24, 2014
app pub date -
Oct 24, 2012
filing date -
Oct 24, 2012
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Abstract
A simple and fast light induced nickel plating method for p-type silicon wafer and n/p silicon solar cell material is revealed. When a n/p solar cell or p-Si semiconductor substrate, which is subjected to metallization with metal contact on the rear side, is immersed in a plating bath, metal ions are reduced on the front surface of semiconductor as soon as illumination starts on the front. The mechanism of nickel plating in this invention is nickel electroplating under the reduction reaction with the use of interfacial potential between the nickel plating bath and the metal surface. It does not need any surface catalytic processing and extra voltage. Instead, it can carry out the nickel deposition on the specific surface with a high nickel plating rate, a simple process and a low production cost.
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