Importance

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Abstract

A MOS device includes a silicon substrate, a wall type silicon body protruding substantially perpendicular to the silicon substrate, a first insulating film formed on the top surface and the side surfaces of the wall type silicon body and a gate electrode formed on the channel region while having the first insulating film between the channel region and the gate electrode. A top surface of the channel region, along with the first insulating film formed thereon, is depressed toward the silicon substrate to form a recess region to thereby define a recessed channel region near the recess region, and the gate electrode extends into the recess region and further extend, beyond the entire recess region, toward the silicon substrate along the side surfaces of the recessed channel region to form side-surface portions of the gate electrode, thereby forming a saddle-like form of gate electrode at the recessed channel region.

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First Claim