Copper-Titanium Alloy Sputtering Target, Semiconductor Wiring Line Formed Using the Sputtering Target, and Semiconductor Element and Device Each Equipped with the Semiconductor Wiring Line
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United States of America Patent
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Issued Date -
Apr 24, 2014
app pub date -
Feb 15, 2012
filing date -
Mar 1, 2011
priority date (Note) -
Abandoned
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Abstract
A copper-titanium alloy sputtering target comprising 3 at % or more and less than 15 at % of Ti and a remainder made up of Cu and unavoidable impurities, wherein a variation (standard deviation) in hardness is within 5.0 and a variation (standard deviation) in electric resistance is within 1.0 in an in-plane direction of the target. Provided are: a sputtering target for forming a copper-titanium alloy wiring line for semiconductors capable of causing the copper alloy wiring line for semiconductors to be equipped with a self-diffusion suppressive function, effectively preventing contamination around the wiring line caused by diffusion of active Cu, improving electromigration (EM) resistance, corrosion resistance and the like, enabling the arbitrary formation of a barrier layer in a simple manner, and uniformizing film properties; a copper-titanium alloy wiring line for semiconductors; and a semiconductor element and a device each equipped with the semiconductor wiring line.
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