Infrared reflection/absorption layer for reducing ghost image of infrared reflection noise and image sensor using the same
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United States of America Patent
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Aug 18, 2015
Grant Date -
May 1, 2014
app pub date -
Oct 29, 2012
filing date -
Oct 29, 2012
priority date (Note) -
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Abstract
An image sensor includes a photosensing element for receiving infrared (IR) radiation and detecting the IR radiation and generating an electrical signal indicative of the IR radiation. A redistribution layer (RDL) is disposed under the photosensing element, the RDL comprising pattern of conductors for receiving the electrical signal. An IR reflection layer, an IR absorption layer or an isolation layer is disposed between the photosensing element and the RDL. The IR reflection layer, IR absorption layer or isolation layer provides a barrier to IR radiation such that the IR radiation does not impinge upon the RDL. As a result, a ghost image of the RDL is not generated, resulting in reduced noise and improved sensitivity and performance of the image sensor.
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