CARBON NANOWALL ARRAY AND METHOD FOR MANUFACTURING CARBON NANOWALL
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United States of America Patent
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Issued Date -
May 8, 2014
app pub date -
Jun 26, 2012
filing date -
Jul 5, 2011
priority date (Note) -
Abandoned
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Abstract
A carbon nanowall array (10) is provided with a substrate (1) and carbon nanowalls (2-9). The substrate (1) is composed of silicon, and includes protruding portions (11) and recessed portions (12). The protruding portions (11) and recessed portions (12) are formed in the direction (DR1) on one surface of the substrate (1). The protruding portions (11) and recessed portions (12) are alternately formed in the direction (DR2) perpendicular to the direction (DR1). Each of the protruding portions (11) has a length of 0.1-0.5 μm in the direction (DR2), and each of the recessed portions (12) has a length of 0.6-1.5 μm in the direction (DR2). The height of each of the protruding portions (11) is 0.3-0.6 μm. Respective carbon nanowalls (2-9) are formed in the length direction (i.e., the direction (DR1)) of the protruding portions (11) of the substrate (1), said carbon nanowalls being formed on the protruding portions (11).
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