Method of Producing a Plurality of Optoelectronic Semiconductor Chips
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United States of America Patent
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Issued Date -
May 22, 2014
app pub date -
Jun 1, 2012
filing date -
Jun 17, 2011
priority date (Note) -
Abandoned
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Abstract
A method of producing a plurality of optoelectronic semiconductor chips is provided. At least one trench is incorporated into the semiconductor body by means of at least one structuring process. The trench breaks through the active zone in a vertical direction. At least one cleaning process is performed at least on exposed locations of the semiconductor body in the region of the trench. The cleaning process includes at least one plasma cleaning process, and the plasma cleaning process at least reduces a number and/or a spatial expansion of structuring residues at exposed locations of the semiconductor body at least in the region of the trench. At least one passivation layer is applied at least to exposed locations of the semiconductor body in the region of the trench.
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