PHOTODIODE FOR AN IMAGE SENSOR AND METHOD OF FABRICATING THE SAME
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United States of America Patent
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Issued Date -
May 29, 2014
app pub date -
Oct 16, 2013
filing date -
Nov 28, 2012
priority date (Note) -
Abandoned
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Abstract
A photodiode for an image sensor and a method of fabricating the photodiode are disclosed. The photodiode includes a substrate having a surface defined as a light-incident surface of the photodiode, wherein a plurality of convex structures are provided on the light-incident surface of the photodiode, namely, a non-planar light-incident surface which is capable of reducing the light reflection and hence improving the ability of the photodiode to capture incident light, thereby enabling an image sensor that incorporates the photodiode to have a higher fill factor and a better performance.
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