GAN-BASED VERTICAL STRUCTURE LED APPLYING GRAPHENE FILM CURRENT EXPANSION LAYER
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United States of America Patent
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Issued Date -
Jun 5, 2014
app pub date -
Mar 13, 2012
filing date -
Jun 2, 2011
priority date (Note) -
Abandoned
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Abstract
The present invention discloses A graphene film electrical current spreading layer applied GaN-based LED in vertical. structure, comprising: a p-type metal electrode including a metal support substrate and a metal reflective mirror formed on the metal support substrate; a hole injecting layer formed on the metal reflective mirror of the p-type metal electrode; an electron blocking layer formed on the hole injecting layer; a lighting layer formed on the electron blocking layer; an electron limiting layer formed on the lighting layer; an electron injecting layer formed on the electron limiting layer; an electrical current spreading layer formed on the electron injecting layer; two n-type metal electrodes formed on the electrical spreading layer and covering a part of the electrical current spreading layer.
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