3D RFICS WITH ULTRA-THIN SEMICONDUCTOR MATERIALS
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United States of America Patent
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Issued Date -
Jun 5, 2014
app pub date -
Dec 5, 2012
filing date -
Dec 5, 2012
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Abandoned
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Abstract
Three-dimensional integrated circuits and method for fabricating the same include forming one or more passive components in a passive-layer dielectric; depositing additional dielectric material on the passive-layer dielectric; forming a gate structure in the additional dielectric material; forming a gate dielectric layer on the gate structure and the additional dielectric material; forming a thin channel material on the gate dielectric; forming source and drain regions in electrical contact with the thin channel material to form a transistor; and passivating the transistor and providing electrical access to the source and drain regions.
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