SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Jun 5, 2014
app pub date -
Jul 19, 2012
filing date -
Jul 19, 2011
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
Provided is a semiconductor element in which atomic interdiffusion between a semiconductor region and an electrode is suppressed and increase in the contact resistance is suppressed even in cases where the semiconductor element is exposed to high temperatures during the production processes or the like. A semiconductor element of the present invention is provided with: a semiconductor region that contains silicon; an electrode that contains aluminum; and a diffusion barrier layer that is interposed between the semiconductor region and the electrode and contains germanium. The germanium content in at least a part of the diffusion barrier layer is 4 at % or more.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully