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Abstract

A simulation method for a P-I-N junction photodiode uses a model that may include a diode model configured to characterize electrical behavior of the P-I-N junction photodiode, and an input for applying a fictitious electrical signal representing optical power received by the P-I-N junction photodiode. A current source model may be coupled to the diode model and may have a transient response to a variation of the fictitious electrical signal, based upon a sum of a first first-order transient response with a time constant based upon to a transit time of carriers in a depletion region of the P-I-N junction, and a second first-order transient response with a time constant based upon a diffusion time of carriers outside of the depletion region. The first and second responses may be respectively weighted by a length of the depletion region and a length of the P-I-N junction outside the depletion region.

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