Semiconductor devices having blocking layers and methods of forming the same

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United States of America Patent

PATENT NO 9202844
APP PUB NO 20140158964A1
SERIAL NO

13966423

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Abstract

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A semiconductor device includes a lower interconnection having second conductivity-type impurities on a substrate having first conductivity-type impurities. A switching device is on the lower interconnection. A first blocking layer is provided between the lower interconnection and the switching device. The first blocking layer includes carbon (C), germanium (Ge), or a combination thereof. A second blocking layer may be provided between the substrate and the lower interconnection.

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Patent Owner(s)

  • SAMSUNG ELECTRONICS CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Han, Jae-Jong Seoul, KR 24 179
Jeong, Seong-Hoon Seongnam-si, KR 31 339
Kang, Yoon-Goo Yongin-si, KR 2 8
Lee, Kong-Soo Hwaseong-si, KR 25 182
Lim, Han-Jin Seoul, KR 51 395
Yoo, Won-Seok Hwaseong-si, KR 9 65

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