Importance

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Abstract

Certain aspects of the present disclosure are directed to a method that includes: depositing, in a deposition environment, an amorphous semiconductor material on a substrate to form a semiconductor film on the substrate; filling, in the depositing process, the deposition environment with a first precursor material such that the semiconductor film formed on the substrate includes a first layer having a first material characteristic; filling, in the depositing process, the deposition environment with a crystallization-stop precursor material such that the silicon film includes a crystallization-stop layer having a crystallization characteristic different from a crystallization characteristic of the first layer; depositing a metal film on the semiconductor film; and annealing the semiconductor film and the metal film at an predetermined annealing temperature for a predetermined period of time such that the first layer is at least partially crystallized and the crystallization-stop layer is at least partially amorphous.

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First Claim