FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATING THE SAME
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United States of America Patent
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Issued Date -
Jun 12, 2014
app pub date -
Jul 3, 2013
filing date -
Dec 12, 2012
priority date (Note) -
Abandoned
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Abstract
A field effect transistor is provided. The field effect transistor may include a capping layer on a substrate, a source ohmic electrode and a drain ohmic electrode on the capping layer, a first insulating layer and a second insulating layer stacked on the capping layer to cover the source and drain ohmic electrodes, a Γ-shaped gate electrode including a leg portion and a head portion, the leg portion being connected to the substrate between the source ohmic electrode and the drain ohmic electrode, and the head portion extending from the leg portion to cover a top surface of the second insulating layer, a first planarization layer on the second insulating layer to cover the Γ-shaped gate electrode, and a first electrode on the first planarization layer, the first electrode being connected to the source ohmic electrode or the drain ohmic electrode.
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