FINFET HYBRID FULL METAL GATE WITH BORDERLESS CONTACTS
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United States of America Patent
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N/A
Issued Date -
Jun 12, 2014
app pub date -
Dec 10, 2012
filing date -
Dec 10, 2012
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A method for fabricating a field effect transistor device includes patterning a fin on substrate, patterning a gate stack over a portion of the fin and a portion of an insulator layer arranged on the substrate, forming a protective barrier over the gate stack, a portion of the fin and a portion of the insulator layer, the protective barrier enveloping the gate stack, depositing a second insulator layer over portions of the fin and the protective barrier, performing a first etching process to selectively remove portions of the second insulator layer to define cavities that expose portions of source and drain regions of the fin without appreciably removing the protective barrier, and depositing a conductive material in the cavities.
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