SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD
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United States of America Patent
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Jun 19, 2014
app pub date -
May 18, 2013
filing date -
Dec 18, 2012
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Abstract
Various embodiments provide a semiconductor structure and fabrication method. An exemplary semiconductor structure can include a semiconductor substrate having an isolation trench formed in the semiconductor substrate. A first barrier layer can be disposed on a bottom surface and a sidewall of the isolation trench. A light absorption layer can be disposed at least on a surface portion of the first barrier layer over the bottom surface of the isolation trench. A second barrier layer can fill the isolation trench to form an isolation structure in the semiconductor substrate. The isolation structure can have a top surface flushed with or over a top surface of the semiconductor substrate.
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