Semiconductor device having element separation region formed from a recess-free trench
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United States of America Patent
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Nov 28, 2017
Grant Date -
Jun 19, 2014
app pub date -
Feb 19, 2014
filing date -
Dec 28, 2006
priority date (Note) -
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Abstract
A method of manufacturing a semiconductor device includes forming a silicon nitride film having an opening portion on a semiconductor substrate, forming a silicon oxide film on the silicon nitride film and on a side face of the opening portion, performing an etching treatment to the silicon oxide film so that a sidewall is formed on the side face of the opening portion, forming a trench on the semiconductor substrate with use of the sidewall and the silicon nitride film as a mask, and forming an insulating layer in the trench. The step of forming the silicon oxide film includes oxidizing the silicon nitride film with a plasma oxidation method or a radical oxidation method.
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