Materials for Thin Resisive Switching Layers of Re-RAM Cells
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United States of America Patent
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Issued Date -
Jun 26, 2014
app pub date -
Dec 20, 2012
filing date -
Dec 20, 2012
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Abstract
Provided are resistive random access memory (ReRAM) cells that include thin resistive switching layers. In some embodiments, the resistive switching layers have a thickness of less than about 50 Angstroms and even less than about 30 Angstroms. The resistive switching characteristics of such thin layers are maintained by controlling their compositions and using particular fabrication techniques. Specifically, low oxygen vacancy metal oxides, such as tantalum oxide, may be used. The concentration of oxygen vacancies may be less than 5 atomic percent. In some embodiments, the resistive switching layers also include nitrogen and. For example, compositions of some specific resistive switching layers may be represented by Ta2O5-XNY, where Y<(X−0.01). The resistive switching layers may be formed using Atomic Layer Deposition (ALD).
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