Field effect transistor-based bio sensor

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United States of America Patent

PATENT NO 8994077
APP PUB NO 20140175522A1
SERIAL NO

13723514

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Abstract

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An apparatus comprises: a sensing element formed on a buried oxide layer of a substrate and providing communication between a source region and a drain region; a gate dielectric layer on the sensing element, the gate dielectric layer defining a sensing surface on the sensing element; a passive surface surrounding the sensing surface; and a compound bound to the sensing surface and not bound to the passive surface, the compound having a ligand specifically configured to preferentially bind a target molecule to be sensed. An electrolyte solution in contact with the sensing surface and the passive surface forms a top gate of the apparatus.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Afzali-Ardakani, Ali Ossining, US 281 3224
D'Emic, Christopher P Ossining, US 33 450
Jagtiani, Ashish Tarrytown, US 9 20
Zafar, Sufi Briarcliff Manor, US 112 1290

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