Memory cell sensing using a boost voltage

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United States of America Patent

PATENT NO 9036426
APP PUB NO 20140177342A1
SERIAL NO

14132124

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Abstract

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The present disclosure includes devices, methods, and systems including memory cell sensing using a boost voltage. One or more embodiments include pre-charging and/or floating a data line associated with a selected memory cell, boosting the pre-charged and/or floating data line, and determining a state of the selected memory cell based on a sensed discharge of the data line after boosting the data line.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
D'Alessandro, Andrea Avezzano, IT 31 72
Di, Cicco Domenico Avezzano, IT 2 8
Moschiano, Violante Bacoli, IT 186 1385

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