HIGH EFFICIENCY SILICON-COMPATIBLE PHOTODETECTORS BASED ON GE QUANTUM DOTS AND GE/SI HETERO-NANOWIRES
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United States of America Patent
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Issued Date -
Jul 3, 2014
app pub date -
Dec 2, 2013
filing date -
Jun 2, 2011
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Abstract
The present disclosure focuses on Ge nanostructured materials for optoelectronic devices: including high-efficiency quantum dot (QD) photodetectors and Si and Ge heteronanowire solar cells. The common thread among these materials is the use of Ge/Si or Ge/oxide barriers to confine carriers and enhance photoconductive gain in detectors and optical absorption and spectral coverage in solar cells.
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