Decoupling capacitor for FinFET compatible process
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United States of America Patent
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Jun 23, 2015
Grant Date -
Jul 3, 2014
app pub date -
Jan 29, 2013
filing date -
Dec 28, 2012
priority date (Note) -
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Abstract
A decoupling capacitor formed from a fin field-effect transistor (FinFET) and method of using the same are provided. An embodiment decoupling capacitor includes a fin field-effect transistor (FinFET) having a semiconductor substrate supporting a gate stack, a source, and a drain, a first terminal coupled to the semiconductor substrate and to the gate stack, the first terminal configured to couple with a first power rail, and a second terminal coupled to the source and to the drain, the second terminal configured to couple with a second power rail having a higher potential than the first power rail.
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