Structure for self-aligned silicide contacts to an upside-down FET by epitaxial source and drain
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United States of America Patent
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Oct 28, 2014
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app pub date -
Mar 5, 2014
filing date -
Mar 30, 2010
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Abstract
An upside-down p-FET is provided on a donor substrate. The upside-down p-FET includes: self-terminating e-SiGe source and drain regions; a cap of self-aligning silicide/germanide over the e-SiGe source and drain regions; a silicon channel region connecting the e-SiGe source and drain regions; buried oxide above the silicon channel region; and a gate controlling current flow from the e-SiGe source region to the e-SiGe drain region.
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