SEMICONDUCTOR DEVICE WITH RUTILE TITANIUM OXIDE DIELECTRIC FILM
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United States of America Patent
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Issued Date -
Jul 3, 2014
app pub date -
Jan 2, 2013
filing date -
Jan 2, 2013
priority date (Note) -
Abandoned
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Abstract
A capacitor structure includes a first electrode on a substrate; a TiO2 dielectric layer directly on the first electrode, wherein the TiO2 dielectric layer has substantially only rutile phase; and a second electrode on the TiO2 dielectric layer. Template layer, seed layer or pretreated layer is not required between the first electrode and the TiO2 dielectric layer. Besides, impurity doping is not required for the TiO2 dielectric layer.
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