Memory device

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United States of America Patent

PATENT NO 9384829
APP PUB NO 20140185359A1
SERIAL NO

13847677

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A memory device includes n (n being an integer of 2 or more) resistance change films being series connected to each other. Each of the resistance change films is a superlattice film in which plural pairs of a first crystal layer made of a first compound and a second crystal layer made of a second compound are alternately stacked. An average composition of the entire resistance change film or an arrangement pitch of the first crystal layers and the second crystal layers are mutually different among the n resistance change films.

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Patent Owner(s)

  • TOSHIBA MEMORY CORPORATION

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Asao, Yoshiaki Kanagawa-ken, JP 123 2057
Furuhashi, Hironobu Mie-ken, JP 11 44
Kunishima, Iwao Mie-ken, JP 51 933
Shuto, Susumu Kanagawa-ken, JP 49 1543
Sudo, Gaku Kanagawa-ken, JP 38 436

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