SELF-ALIGNED DOUBLE PATTERNING FOR MEMORY AND OTHER MICROELECTRONIC DEVICES
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United States of America Patent
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app pub date -
Mar 11, 2014
filing date -
Jan 28, 2009
priority date (Note) -
Abandoned
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Abstract
A semiconductor device is provided. The semiconductor device includes a microelectronic layer, a first mask layer formed on the microelectronic layer having first features separated by first openings, and a second mask layer formed on the first mask layer having second features that are separated by second openings. Each second feature is centrally located on a respective one of the first features. A length each second feature in a dimension is substantially equal to a length of a respective one of the first openings in the dimension.
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