Power semiconductor device

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9041101
APP PUB NO 20140191310A1
SERIAL NO

14202912

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A power semiconductor device according to an embodiment includes an element portion in which MOSFET elements are provided and a termination portion provided around the element portion, and has pillar layers provided respectively in parallel to each other in a semiconductor substrate. The device includes a first trench and a first insulation film. The first trench is provided between end portions of the pillar layers, in the semiconductor substrate at the termination portion exposed from a source electrode of the MOSFET elements. The first insulation film is provided on a side surface and a bottom surface of the first trench.

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Patent Owner(s)

  • KABUSHIKI KAISHA TOSHIBA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Izumisawa, Masaru Hyogo, JP 48 960
Ohta, Hiroshi Hyogo, JP 180 1927
Ono, Syotaro Hyogo, JP 112 1549
Yamashita, Hiroaki Hyogo, JP 67 474

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