METHOD FOR PRODUCING METAL CONTACTS WITHIN AN INTEGRATED CIRCUIT, AND CORRESPONDING INTEGRATED CIRCUIT
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United States of America Patent
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Issued Date -
Jul 10, 2014
app pub date -
Dec 30, 2013
filing date -
Jan 4, 2013
priority date (Note) -
Abandoned
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Abstract
An integrated circuit includes a MOS transistor having a gate region and source and drain regions separated from the gate region by insulating spacers. At least two metal contact pads respectively contact with two metal silicide regions (for example, a cobalt silicide) which lie within the source and drain regions. The silicide regions are located at the level of lower parts of the two metal contact pads and are separate by a distance from the insulating spacers.
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