Flash multi-level threshold distribution scheme

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United States of America Patent

PATENT NO 9263146
APP PUB NO 20140192593A1
SERIAL NO

14208812

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Abstract

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A threshold voltage distribution scheme for multi-level Flash cells where an erase threshold voltage and at least one programmed threshold voltage lie in an erase voltage domain. Having at least one programmed threshold voltage in the erase voltage domain reduces the Vread voltage level to minimize read disturb effects, while extending the life span of the multi-level Flash cells as the threshold voltage distance between programmed states is maximized. The erase voltage domain can be less than 0V while a program voltage domain is greater than 0V. Accordingly, circuits for program verifying and reading multi-level Flash cells having a programmed threshold voltage in the erase voltage domain and the program voltage domain use negative and positive high voltages.

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Patent Owner(s)

  • CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kim, Jin-Ki Ottawa, CA 226 5804

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